cyv 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BDY90 description ? high dc current gain- : hfe=30-120@lc=5a ? excellent safe operating area ? high current capability applications ? designed for use in switching-control amplifiers, power gates, sw tching regulators, converters, and inverters. absolute maximum ratings(ta=25'c) symbol vcbo vgev vceo vebo ig icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage vbe= -1.5v collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @tc=s25c junction temperature storage temperature range value 120 120 100 6 10 15 2 60 175 -65-175 unit v v v v a a a w 'c c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 2.5 unit c/w .3 i pin 1.base ?\^ 2. bwiitter ?v 3. collect or (case) to-3 package , f ie v-, h r-"-i i -*iu-d . ? ft\^ ? " *"""" "jr" ?~ ^ migri c r / i ? c 1 iran mm mm max a 3900 b 2530 c '?*> d 0.90 1 ,4c 26 s7 8.30 1 .10 1.60 g 10,92 h 545 ^ 1140 l 1675 n 13.40 0 4.00 u 30 oc v 4,30 13.so 170s 19.62 4,20 3020 450 ! t-k -eh t t i b r 1 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY90 electrical characteristics tc=25'c unless otherwise specified symbol vceotsus) voe(sat)-1 vce(sat)-2 vbe(sat)-l vse(sat)-2 icbo icev iebo hpe-1 hpe-2 hfe-3 fr parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain current-gain ? bandwidth product conditions lc=100ma;lb=0 lc= 5a; ib= 0.5a ic=10a;ib=1a lc= 5a; ib= 0.5a lc= 10a; ib= 1a vcb=120v; ie=0 vce=120v;vbe=-1.5v vce=1 20v;vbe=-1 .5v;tc=1 50'c veb=6v; lc=0 lc=1a; vce=2v lc=5a; vce=5v lc=10a; vce=5v lc= 0.5a;vce= 5v;ftest = 5mhz min 120 30 30 20 typ 70 max 0.5 1.5 1.2 1.5 1.0 1.0 3.0 1.0 120 unit v v v v v ma ma ma mhz switching times ton tstg tf turn-on time storage time fall time lc=5a;lbi=-lb2=0.5a, vcc=30v 0.35 1.3 0.2 u s 11 s u s
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